Our country successfully developed with the international advanced level of ZnO-based short wavelength laser
April 05, 2021
Recently, Nanjing University and the Chinese Academy of Sciences Institute of Shanghai Institute of Optics and Fine Mechanics, National 863 Project, "a number of key technologies of ZnO-based short wavelength laser technology" made an important breakthrough. After three thousand years of material growth and process experiments, the research group successfully developed the first ZnO-based homogeneous PN junction light-emitting device (LED) in the world and achieved blue and yellow emission at room temperature (29 ℃).
This achievement breaks through the technical problems of a series of material devices such as organic chemical vapor deposition (MOCVD) equipment for ZnO material growth, ZnO single crystal preparation, ZnO thin film material growth and doping, ohmic contact and the like, and forms a ZnO single crystal substrate Technology, ZnO metal MOCVD system technology, ZnO MOCVD homoepitaxial epitaxial technology and ZnO p-type doping in situ control and activation technology and many other technologies with independent intellectual property rights, following the Japan's Northeastern University in the magnesium aluminum acid scandium substrate The development of a successful ZnO-based LED by molecular beam epitaxy has shown that China has successfully entered the leading international high-tech field of ZnO light-emitting devices.
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